Manufacturing method of semiconductor device

ABSTRACT

A manufacturing method of a semiconductor device may be provided. The method may include forming stacks including interlayer insulating layers and separated by a slit, the interlayer insulating layers surrounding a channel layer and stacked to be spaced apart from one another with an interlayer space interposed therebetween. The method may include forming a conductive pattern filling the interlayer space. The method may include forming an isolation layer on a surface of the conductive pattern by oxidizing a portion of the conductive pattern by performing an oxidizing process.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a continuation application of U.S.application Ser. No. 15/487,761, filed on Apr. 14, 2017, and claimspriority under 35 U.S.C § 119(a) to Korean patent application10-2016-0105752 filed on Aug. 19, 2016 in the Korean IntellectualProperty Office, the entire disclosure of which is incorporated byreference herein.

BACKGROUND 1. Technical Field

An aspect of the disclosure may generally relate to a semiconductordevice and a manufacturing method thereof, and more particularly, to asemiconductor device including a conductive pattern and a manufacturingmethod thereof.

2. Related Art

A semiconductor device has a plurality of conductive patterns. Theconductive patterns are arranged in various structures in accordancewith a design of the semiconductor device.

A three-dimensional semiconductor device consisting of athree-dimensional memory device has been proposed. The conductivepattern of the three-dimensional semiconductor device may be arrangedbetween interlayer insulting layers surrounding a channel layer andstacked to be spaced apart from one another. In such a conductivepattern of the three-dimensional semiconductor device, it is difficultto achieve low resistance due to various reasons.

SUMMARY

According to an aspect of the disclosure, there is provided asemiconductor device. The semiconductor device may include a channellayer. The semiconductor device may include interlayer insulating layerssurrounding the channel layer and stacked to be spaced apart from oneanother along an extension direction of the channel layer. Thesemiconductor device may include conductive patterns filling interlayerspaces between the insulating layers adjacent to one another, anddeviating from the interlayer spaces. The semiconductor device mayinclude first isolation layers covering a portion of the conductivepatterns that deviate from the interlayer spaces.

According to an aspect of the disclosure, there is provided amanufacturing method of a semiconductor device. The method may includeforming stacks including interlayer insulating layers and separated by aslit, the interlayer insulating layers surrounding a channel layer andstacked to be spaced apart from one another with an interlayer spaceinterposed therebetween. The method may include forming a conductivepattern filling the interlayer space. The method may include forming anisolation layer on a surface of the conductive pattern by oxidizing aportion of the conductive pattern by performing an oxidizing process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are cross-sectional diagrams illustrating arepresentation of an example of a conductive pattern of a semiconductordevice according to an embodiment of the present disclosure.

FIG. 2 is an enlarged diagram illustrating a representation of anexample of region A illustrated in FIGS. 1A and 1B.

FIGS. 3A to 3C are perspective diagrams illustrating representations ofexamples of various structures of a semiconductor device including aconductive pattern according to an embodiment of the present disclosure.

FIGS. 4A to 4G are cross-sectional diagrams illustrating representationsof examples of a manufacturing method of a semiconductor deviceaccording to an embodiment of the present disclosure.

FIGS. 5A and 5B are cross-sectional diagrams illustrating arepresentation of an example of a manufacturing method of asemiconductor device according to an embodiment of the presentdisclosure.

FIG. 6 is a block diagram illustrating a representation of an example ofa memory system according to an embodiment of the present disclosure.

FIG. 7 is a block diagram illustrating a representation of an example ofa computing system according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

Hereafter, embodiments will be described with reference to theaccompanying figures. However, the technical range of the presentdisclosure is not limited to the detailed description of thespecification but embodiments should not be construed as limited to theparticular shapes of regions illustrated herein but may includedeviations in shapes. It will be understood by those skilled in the artthat various changes in form and details may be made without departingfrom the spirit and scope of the description as set forth in thefollowing claims. Like reference numerals in the drawings denote likeelements.

Various embodiments may relate to a semiconductor device capable ofimproving the resistance of a conductive pattern and a manufacturingmethod thereof.

FIGS. 1A and 1B are cross-sectional diagrams illustrating arepresentation of an example of a conductive pattern of a semiconductordevice according to an embodiment of the present disclosure.

Referring to FIGS. 1A and 1B, a semiconductor device according to anembodiment of the present disclosure may include memory cells MC in agate all around (GAA) structure stacked along a channel layer CH whilebeing spaced apart from one another. The memory cells MC arranged atdifferent heights from one another may be insulated from one another byinterlayer insulating layers ILD. The memory cells MC and the interlayerinsulating layers ILD may be alternately stacked along the channel layerCH.

Gates of the memory cells MC may be connected to conductive patterns CP.Each of the memory cells MC may further include a multilayer ML. Themultilayer ML may be arranged between the channel layer CH and theconductive patterns CP.

The multilayer ML may be formed as a liner type on a side wall of a holeH penetrating the conductive patterns CP and the interlayer insulatinglayers ILD. The multilayer ML may include a data storing layer thatstores charge. The multilayer ML may further include a tunnel insulatinglayer and a first blocking insulating layer with the data storing layerinterposed therebetween. Configurations of the multilayer ML may befurther discussed with regards to FIG. 2.

The channel layer CH may be formed as a tube type surrounding a coreinsulating layer CO that fills a central area of the hole H.Alternatively, the channel layer CH may be formed to completely fill thecentral area of the hole H. A cross-section of the hole H may be formedin various structures such as a circle, an oval, a rectangular, asquare, or a polygonal type.

The conductive patterns CP may fill interlayer spaces S between theinterlayer insulating layers ILD arranged at different heights,respectively, and extend to deviate from the interlayer spaces S. Theconductive patterns CP may be formed to have a greater volume than theinterlayer spaces S. Accordingly, in the present disclosure, eachresistance of the conductive patterns may be reduced.

A portion of each of the conductive patterns CP that deviate from theinterlayer spaces S may be covered with an isolation layer IO. Theisolation layer IO may be formed by oxidizing the conductive patternsCP. The isolation layer IO may contact the interlayer insulating layersILD or contact a second blocking insulating layer BI2 formed on asurface of the interlayer insulating layers ILD so that the interlayerspaces S are sealed.

The portions of the conductive patterns CP outside the interlayer spacesS may not be insulated by the interlayer insulating layers ILD. Theisolation layer IO may prevent a bridge error where the portions of theconductive patterns CP arranged on different layers are connected to oneanother while not being insulated by the interlayer insulating layersILD. In addition, an insulating distance between the conductive patternsCP arranged different layers may be achieved by the isolation layer IO.

The interlayer insulating layers ILD may surround the channel layer CHand be stacked to be spaced apart from one another along an extensiondirection of the channel layer CH. Edges of the interlayer insulatinglayers ILD may be defined by a slit SI. A side wall of the slit SI maybe arranged on the same line with the edges of the interlayer insulatinglayers ILD. The interlayer spaces S filled with the conductive patternsCP, respectively, may be defined between the interlayer insulatinglayers ILD arranged on the different layers and adjacent to one another.

Each of the conductive patterns CP may include a first conductivepattern C1 and a second conductive pattern C2. The first conductivepattern C1 may surround the channel layer CH and fill a portion adjacentto the channel layer CH of a single interlayer space S correspondingthereto. The second conductive pattern C2 may contact the firstconductive pattern C1, fill the remaining portion of the singleinterlayer space S, and extend toward the slit SI outside the singleinterlayer space S.

The first conductive pattern C1 may be formed of various conductivematerials used as a growth seed layer of the second conductive patternC2. The first conductive pattern C1 may be formed of a conductivematerial with low resistance. For example, the first conductive patternC1 may be formed of metal. For example, the first conductive pattern C1may include tungsten. An edge of each interlayer insulating layer ILDmay protrude further toward the slit SI than the first conductivepattern C1. That is, the first conductive pattern C1 may be indentedtoward the channel layer CH rather than the interlayer insulating layersILD.

The second conductive patterns C2 may be formed of various conductivematerials with low resistance. The second conductive pattern C2 may growfrom the first conductive pattern C1, and be formed of the same metal asthe conductive pattern C1. For example, the second conductive pattern C2may include tungsten. The second conductive pattern C2 grown from thefirst conductive pattern C1 may have a resistivity greater than thefirst conductive pattern C1. The second conductive pattern C2 mayinclude a first portion P1 and a second portion P2. The first portion P1may fill a portion of the interlayer space S corresponding thereto. Aportion of the interlayer space S filled with the first portion P1 maybe an area that is not filled with the first conductive pattern C1 of anentire area of the interlayer space S. The second portion P2 may extendoutwardly to an outside of the interlayer space S from the first portionP1. The second portions P2 may further protrude toward the slit SI thanthe edges of the interlayer insulating layers ILD. The second portionsP2 protruding further than the interlayer insulating layers ILD mayincrease a volume of each of the conductive patterns CP, therebyreducing the resistance of each of the conductive patterns CP.

Each of the conductive patterns CP including the first conductivepattern C1 and the second conductive pattern C2 may be formed on thesecond blocking insulating layer BI2. The second blocking insulatinglayer BI2 may be formed of the same insulating material as the firstblocking insulating layer of the multilayer ML, or an insulatingmaterial with higher permittivity than the first blocking insulatinglayer. For example, the first blocking insulating layer and the secondblocking insulating layer BI2 of the multi-layer ML may be formed of asilicon oxide. For another example, the first blocking insulating layermay be formed of a silicon oxide and the second blocking insulatinglayer may be formed of an aluminum oxide. The second blocking insulatinglayer BI2 may be formed on surfaces of the interlayer spaces S and theside walls of the slit SI. In some cases, the second blocking insulatinglayer BI2 may be not formed.

The portions of the conductive patterns CP deviating from the interlayerspaces S between the interlayer insulating layers ILD may be insulatedby the isolation layer IO. The isolation layer IO may be formed byoxidizing a portion of the second conductive pattern C2 to minimizevolume damage of the conductive patterns CP. As a result, the isolatinglayer IO may be formed of an oxide of the second conductive pattern C2.For example, the isolation layer IO may include a tungsten oxide.

The isolation layer IO may be formed to cover a side wall of the secondportion P2 of the second conductive pattern C2. The isolation layer IOmay be formed in various structures depending on the presence ofconductive residues generated during a manufacturing process of asemiconductor device.

For example, when the conductive residues do not remain on the sidewallsof the slit SI, a plurality of isolation layers I0 may seal theinterlayer spaces S as described in FIG. 1A. In addition, the isolationlayers IO may be separated from one another. The sidewalls of theconductive patterns CP may be covered with the isolation layers I0,respectively, the isolation layers I0 may be formed of an oxide of theconductive patterns CP. The isolation layers I0 may electricallyseparate the conductive patterns arranged on different layers from oneanother.

In another example, when the conductive residues remain on the sidewallsof the slit SI, the isolation layer I0 may include first isolationlayers and second isolation layers. The first and second isolationlayers may be portions of the isolation layer I0 illustrated in FIG. 1B.For example, the first isolation layers may be portions of the isolationlayer I0 contacting the conductive patterns CP, and the second isolationlayers may be portions of the isolation layer I0 arranged on thesidewalls of the slit SI defining edges of the interlayer insulatinglayers ILD. The second isolation layers may be formed of an oxide of theconductive residues. The first isolation layers may be connected by thesecond isolation layers.

FIG. 2 is an enlarged diagram illustrating a representation of anexample of region A illustrated in FIGS. 1A and 1B.

Referring to FIG. 2, the multilayer ML as described in FIGS. 1A and 1Bmay include a data storing layer DL, a tunnel insulating layer TIarranged between the data storing layer DL and the channel layer CH, anda first blocking insulating layer BI1 surrounding the data storing layerDL. The data storing layer DL, the tunnel insulating layer TI and thefirst blocking insulating layer BI1 may extend along the sidewall of thehole H, and surround the channel layer CH. The data storing layer DL maybe formed of a material layer that allows for charge trap. For example,the data storing layer DL may be formed of a silicon nitride. The tunnelinsulating layer TI may be formed of a silicon oxide that allows forcharge tunneling. The first blocking insulating layer BI1 may be formeda material layer that allow for blocking charge.

The channel layer CH may be formed in a tube type surrounding the coreinsulating layer C0, but the embodiments are not limited thereto. Thatis, the channel layer CH may not be limited to a tube type, but formedin various structures.

The first blocking insulating layer BI1 may contact the second blockinginsulating layer BI2 formed on a surface of each conductive pattern CP,but the embodiments are not limited thereto. For example, the secondblocking insulating layer BI2 may not be formed, and the first blockinginsulating layer BI1 may contact each conductive pattern CP.

The first blocking insulating layer BI1 may not be formed. The secondblocking insulating layer BI2 may contact the data storing layer DL ofthe multilayer ML.

FIGS. 3A to 3C are perspective diagrams illustrating representations ofexamples of various structures of a semiconductor device including aconductive pattern according to an embodiment of the present disclosure.For example, FIGS. 3A to 3B are perspective diagrams for describingthree-dimensional memory strings. Interlayer insulating layers are notillustrated in FIGS. 3A to 3B for the convenience of explanation.

A memory string according to an embodiment may be formed in athree-dimensional structure for high integration of a semiconductordevice. For example, the memory string may be formed in a U type asillustrated in FIG. 3A, or in a straight type as illustrated in FIGS. 3Band 3C.

Referring to FIG. 3A, a memory string UCST in a U type may includememory cells and select transistors arranged along the channel layer CHin a U type. Gates of the memory cells and gates of the selecttransistors may be portions of the conductive patterns (CP1 to CPn).Each of the conductive patterns (CP1 to CPn) may include a firstconductive pattern C1 and a second conductive pattern C2 in thestructure as described in FIGS. 1A and 1B, and a portion thereof may becovered with the isolation layer I0 in the structure as described inFIG. 1A or FIG. 1B.

The channel layer CH may include a pipe channel layer P_CH embedded in apipe gate PG, and a source side channel layer S_CH and a drain sidechannel layer D_CH extending from the pipe channel layer P_CH. Thechannel layer CH may be formed in a tube type by surrounding a coreinsulating layer that fills a central area of a U type hole, or beformed to completely fill the central area of the U type hole. An outerwall of the channel layer CH may be surrounded by the multilayer ML.

The channel layer CH may be electrically connected between a source lineSL and a bit line BL. The bit line BL and the source line SL may bearranged on different layers and spaced apart from each other. Forexample, the source line SL may be arranged under the bit line BL. Thesource line SL may be electrically connected to a top of the source sidechannel layer S_CH. The source line SL may extend in a first directionI. A source contact plug may be formed between the source line SL andthe source side channel layer S_CH. The bit line BL may be electricallyconnected to a top of the drain side channel layer D_CH. The bit line BLmay extend in a second direction II intersecting the first direction I.A drain contact plug may be formed between the bit line BL and the drainside channel layer D_CH.

The conductive patterns CP1 to CPn may be formed in n layers spacedapart from one another under the bit line BL and the source line SL. Theconductive patterns CP1 to CPn may include source side conductivepatterns CP_S and drain side conductive patterns CP_D.

The source side conductive patterns CP_S may surround the source sidechannel layer S_CH and be stacked to be spaced apart from one another.The source side conductive patterns CP_S may include source side wordlines WL_S and a source select line SSL. The source select line SSL maybe arranged on the source side word lines WL_S. The source select lineSSL may be arranged in one or two or more layers on the source side wordlines WL_S. FIG. 3A exemplifies that the source select line SSL consistsof an nth pattern CPn arranged on the uppermost layer of the source sideconductive patterns CP_S and an (n-1)th pattern CPn-1 under the nthpattern CPn, but the embodiments are not limited thereto.

The drain side conductive patterns CP_D may surround the drain sidechannel layer D_CH and be stacked to be spaced apart from one another.The drain side conductive patterns CP_D may include drain side wordlines WL_D and a drain select line DSL. The drain select line DSL may bearranged in the drain side word lines WL_D. The drain select line DSLmay be arranged in one or two or more layers on the drain side wordlines WL_D. FIG. 3A exemplifies that the drain select line DSL consistsof an nth pattern CPn arranged on the uppermost layer of the drain sideconductive patterns CP_D and an (n-1)th pattern CPn-1 under the nthpattern CPn, but the present embodiments are not limited thereto.

The source side conductive patterns CP_S and the conductive patternsCP_D may be separated from each other with the slit SI interposedtherebetween.

The pipe gate PG may be arranged under the source side conductivepatterns CP_S and the drain side conductive patterns CP_D, and be formedto surround the pipe channel layer P_CH. The pipe gate PG may bearranged under the conductive patterns CP1 to CPn.

Source side memory cells may be formed at interconnections of the sourceside channel layer S_CH and the source side word lines WL_S, and drainside memory cells may be formed at interconnections of the drain sidechannel layer D_CH and the drain side word line WL_D. A source selecttransistor may be formed at an interconnection of the source sidechannel layer S_CH and the source select line SSL, and a drain selecttransistor may be formed at an interconnection of the drain side channellayer D_CH and the drain select line DSL. A pipe transistor may beformed at an interconnection of the pipe channel layer P_CH and the pipegate PG. The source select transistor, the source side memory cells, thepipe transistor, the drain side memory cells, and the drain selecttransistor arranged along a single channel layer CH may be connected inseries through the channel layer CH. The source select transistor, thesource side memory cells, the pipe transistor, the drain side memorycells and the drain select transistor connected in series may define a UType memory string UCST in accordance with a U type shape of the channellayer CH. The source side word lines WL_S may transmit signals to gatesof the source side memory cells, and the drain side word lines WL_D maytransmit signals to gates of the drain side memory cells, the sourceselect line SSL may transmit a signal to a gate of the source selecttransistor, the drain select line DSL may transmit a signal to a gate ofthe drain select transistor, and the pipe gate PG may transmit a signalto a gate of the pipe transistor. The pipe transistor may respond to asignal applied to the pipe gate PG, and connect the source side memorycells to the drain side memory cells.

The channel layer CH may be formed in various types such as a W type inaddition to the U type as described above. According to the structure ofthe channel layer CH, arrangement of the memory cells may be variouslydetermined, and the memory string structure may be formed in variousshapes accordingly.

Referring to FIGS. 3B and 3C, a memory string SCST in a straight typemay include memory cells and select transistors stacked along a channellayer CH in a straight type. The gates of the memory cells and the gatesof the select transistors may be connected to the conductive patternsCP1 to CPn. Each of the conductive patterns CP1 to CPn may include thefirst conductive pattern C1 and the second conductive pattern C2 in thestructure as described in FIGS. 1A and 1B, and the portion of theconductive patterns CP may be covered with the isolation layer I0 in thestructure as described in FIG. 1A or FIG. 1B.

The channel layer CH may be formed in a tube type surrounding a coreinsulating layer that fills a central area of the hole in a straighttype, or be formed to completely fill the central area of the hole inthe straight type.

A top of the channel layer CH may be electrically connected to the bitline BL. The bit line BL may extend in the second direction II. A draincontact plug (not illustrated) may be further formed between the bitline BL and the channel layer CH.

The channel layer CH may be connected to the source line SL. The sourceline SL may be formed in various structures.

Referring to FIG. 3B, a source line SL may contact a bottom of thechannel layer CH. The source line SL may be a doped poly silicon layer.The channel layer CH may contact an upper surface of the source line SLand extend in a third direction III toward the bit line BL.

The side wall of the channel layer CH illustrated in FIG. 3B may besurrounded by the multilayer ML.

As illustrated in FIG. 3C, a lower portion of the channel layer CH mayextend to the inside of the source line SL. That is, the lower portionof the channel layer CH may penetrate a portion of the source line SL.

For example, the source line SL may be formed in a stacked structure ofa first source layer SL1 and a second source layer SL2. The first sourcelayer SL1 may surround the lower portion of the channel layer CH. Thesecond source layer SL2 may be arranged on a top of the first sourcelayer SL1, and contact an upper surface of the first source layer SL1and a sidewall of the channel layer CH. The second source layer SL2 maysurround the channel layer CH.

An outer wall of the channel layer CH illustrated in FIG. 3C may besurrounded by a first multi-pattern ML1 or a second multi-pattern ML2.Each of the first multi-pattern ML1 and the second multi-pattern M2 mayinclude the tunnel insulating layer TI, the data storing layer DL andthe first blocking insulating layer BI1 illustrated in FIG. 2. The firstmulti-pattern ML1 may be formed to surround a sidewall of an upperportion of the channel layer CH protruding from the source line SL. Thesecond multi-pattern ML2 may be arranged between the first source layerSL1 and the channel layer CH. The first multi-pattern ML1 and the secondmulti-pattern ML2 may be separated with the second source layer SL2interposed therebetween.

Referring to FIGS. 3B and 3C, the conductive patterns CP1 to CPn may bearranged in n layers spaced apart from one another between the bit lineBL and the source line SL. The conductive patterns CP1 to CPn maysurround the channel layer CH to be stacked from one another. Theconductive patterns CP1 to CPn may include the source select line SSL,the word lines WL and the drain select line DSL. The source select lineSSL may be arranged on the source line SL. The word lines WL may bearranged on the source select line SSL. The drain select line DSL may bearranged on the word lines WL. The conductive patterns CP1 to CPn may bedivided into a plurality of substructures by the slit SI.

The source select line SSL may be arranged in one or two or more layersunder the word lines WL. FIG. 3B and FIG. 3C exemplify that the sourceselect line SSL consists of the first conductive pattern CP1 arranged onthe lowermost layer of the conductive patterns CP1 to CPn and the secondconductive pattern CP2 above the first conductive pattern C1, but thepresent embodiments are not limited thereto.

The drain select line DSL may be arranged in one or two or more layersabove the word lines WL. FIG. 3B and FIG. 3C exemplify that the drainselect line DSL consists of the nth conductive pattern CPn arranged onthe uppermost layer of the conductive patterns CP1 to CPn and the(n-1)th conductive pattern CPn-1 under the nth conductive pattern CPn,but the present embodiments are not limited thereto.

The conductive patterns CP1 to CPn may be separated by the slit SI. Thesource select line SSL and the drain select line DSL may be divided intoa smaller unit than the word lines WL. For example, the channel layersCH commonly surrounded by the respective word lines WL may be surroundedby each of the drain select lines DSL separated from one another. Thedrain select line DSL may be divided by an upper slit USI in addition tothe slit SI to be formed to have a smaller width than the word lines WL.

According to the structure as described in FIGS. 3B and 3C, the memorycells may be formed at interconnections between the channel layer CH andthe word lines WL, the drain select transistor may be formed at aninterconnection between the channel layer CH and the drain select lineDSL, the source select transistor may be formed in an interconnectionbetween the channel layer CH and the source select line SSL. The sourceselect transistor, the memory cells, and the drain select transistoraligned in a row along a single channel layer CH may be connected inseries through the channel layer CH, and define the memory string SCSTin a straight type. The word lines WL may transmit signals to the gatesof the memory cells, the source select line SSL may transmit a signal toa gate of the source select transistor, and the drain select line DSLmay transmit a signal to a gate of the drain select transistor.

FIGS. 4A to 4G are cross-sectional diagrams illustrating representationsof examples of a manufacturing method of a semiconductor deviceaccording to an embodiment of the present disclosure. A manufacturingmethod of the semiconductor devices illustrated in FIGS. 4A to 4G may beused to form the semiconductor devices illustrated in FIG. 1A. FIGS. 4Ato 4G are cross-sectional diagrams taken along the second direction IIin which the bit line BL illustrated in FIGS. 3A to 3C extends.

Referring to FIG. 4A, interlayer insulating layers 101 and sacrificiallayers 103 may be alternately arranged on a lower structure (notillustrated). The number of interlayer insulating layers 101 and thesacrificial layers 103 may be determined in various combinations. Thesacrificial layers 103 may be formed of a material different from theinterlayer insulating layers 101. For example, the sacrificial layers103 may be formed of a material having an etch selectivity with respectto the interlayer insulating layers 101. For example, the interlayerinsulating layers 101 may be formed of an oxide, and the sacrificiallayers 103 may be formed of a nitride having an etch selectivity withrespect to an oxide.

The lower structure may include the pipe gate PG illustrated in FIG. 3A,the source line SL illustrated in FIG. 3B, or the first source line SLand a source sacrificial layer (not illustrated) illustrated in FIG. 3C.

Subsequently, the interlayer insulating layers 101 and the sacrificiallayers 103 may be etched to form the holes H penetrating therethrough. Apillar structure PS may be formed in each of the holes H. Forming thepillar structure PS may include forming a multilayer 111 on a surface ofeach of the holes H, and forming the channel layer CH on the multilayer111 (see FIG. 2). The multilayer 111 may be formed by sequentiallystacking the first blocking insulating layer BI1, the data storing layerDL and the tunnel insulating layer T1 as described in FIG. 2 on the sidewalls of the holes H. The channel layer CH may be formed of asemiconductor layer, for example, the channel layer CH may include asilicon layer. The channel layer CH may be formed to completely fill theinside of each of the holes H, or be formed in a liner type whileopening the central area of each of the holes H. When the channel layerCH is formed in a liner type, forming the pillar structure PS mayfurther include filling the central area of each of the holes H with acore insulating layer 115.

Referring to FIG. 4B, the slit SI to divide the interlayer insulatinglayers 101 into stacks ST_A and ST_B surrounding the pillar structuresPS may be formed. The slit SI may be formed by etching the interlayerinsulating layers 101 and the sacrificial layers (103 in FIG. 4A)between the pillar structures PS.

The sacrificial layers (103 of FIG. 4A) may be selectively removed bythe slit SI. When the sacrificial layer (103 of FIG. 4A) is formed of anitride, a phosphate may be used to selectively remove the sacrificiallayers (103 of FIG. 4A). The interlayer spaces S may be opened betweenthe interlayer insulating layers 101 adjacent to one another of each ofthe stacks ST_A and ST_B.

Referring to FIG. 4C, a first conductive layer 131 may be depositedwithin the interlayer spaces S by the slit SI to fill the interlayerspaces S. Prior to depositing the first conductive layer 131, a secondblocking insulating layer 121 extending on surfaces of the interlayerspaces S and on a surface of the slit SI may be further formed.

The first conductive layer 131 may be formed of various conductivematerials having low resistance, for example, metal. The firstconductive layer 131 may be formed of metal used as a seed layer of thesecond conductive layer to be formed in a sequential process. Forexample, the first conductive layer 131 may include tungsten.

The first conductive layer 131 may be deposited in enough thickness tocompletely fill the interlayer spaces S. The first conductive layer 131may be formed on the side wall of the slit SI.

Referring to FIG. 4D, the first conductive layer 131 may be etched sothat the first conductive layer 131 as described in FIG. 4C may beremoved inside the slit SI, and the first conductive layer 131 mayremain in a portion of each of the interlayer spaces S. First conductivepatterns 131P may be patterned to fill portions of the interlayer spacesS adjacent to each of the pillar structures PS without deviating fromthe interlayer spaces S. The first conductive patterns 131P may beindented toward the pillar structures PS further than the interlayerinsulating layers 101.

Referring to FIG. 4E, the second conductive patterns 133 may be formedon sidewalls of the first conductive patterns 131P through the slit SIto fill the remaining portions of the interlayer spaces S. The secondconductive patterns 133 may be formed by using a selective growth methodthat uses the first conductive patterns 131P as a seed layer. In thiscase, the second conductive patterns 133 may grow from the firstconductive patterns 131P. Each of the second conductive patterns 133grown from the first conductive patterns 131P may include the firstportion P1 arranged inside the single interlayer space S correspondingthereto and a second portion P2A extending outwardly from the firstportion P1 toward the outside of the single interlayer space Scorresponding thereto. When forming the second conductive patterns 133by using a selective growth method, a bridge error where the secondconductive patterns 133 corresponding to the interlayer spaces Sarranged on the different layers are connected to one another may beeasily controlled by controlling a growth thickness of the secondportion P2A. As the growth thickness of the second portion P2Aincreases, resistance of each of the second conductive patterns 133 maybe reduced by increasing a volume of the second conductive patterns 133.

The second conductive pattern 133 may grow from the first conductivepatterns 131P and be formed of the same metal as the first conductivepatterns 131P. For example, the second conductive patterns 133 mayinclude tungsten. In an embodiment, the second conductive pattern 133may have a greater resistivity than each of the first conductivepatterns 131P.

Referring to FIG. 4F, in the process of forming the second conductivepatterns 133 as described in 4E, when each of the second conductivepatterns 133 is excessively grown to reduce resistance of the secondconductive patterns, the second conductive patterns 133 on the differentlayers may not be insulated from one another. To prevent the above, aportion of the second portion P2A of each of the second conductivepatterns 133 as described in FIG. 4E may be oxidized to a predeterminedthickness by performing an oxidizing process. As a result, an isolationlayer 135 may be formed on a surface of a non-oxidized second portionP2B. The non-oxidized second portion P2B may be used as a portion ofeach of the conductive patterns CP. The oxidizing process may include athermal oxidation or a radical oxidation. The oxidizing process may beperformed at 600° C. to 1000° C. For example, the oxidizing process maybe performed at 730° C. to 780° C.

Each of the conductive patterns CP may include the first conductivepattern 131P arranged inside the single interlayer space S correspondingthereto and a second conductive pattern 133 sealed between the firstconductive pattern 131P and the isolation layer 135. The secondconductive pattern 133 may include the first portion P1 arranged insidethe single interlayer space S corresponding thereto, and thenon-oxidized second portion P2B that protrudes from the first portion P1to the outside of the single interlayer space S corresponding thereto.Therefore, a volume of the second conductive patterns 133 may beincreased though the non-oxidized second portion P2B.

The isolation layer 135 may be formed by oxidizing a surface of thesecond portion P2A as described in FIG. 4E, thereby minimizing reductionof the volume of the conductive pattern CP. The oxidizing process forforming the isolation layer 135 may be controlled so that the remainingnon-oxidized second portion P2B may remain to protrude toward the slitSI rather than edges of the interlayer insulating layers 101 adjacent tothe slit SI. When the second blocking insulating layer 121 is formed,the isolation layer 135 may contact the second blocking insulating layer121. Although not illustrated in FIG. 4E, when the second blockinginsulating layer 121 is not formed, the isolation layer 135 may contactthe interlayer insulating layer 101. To contact the isolation layer 135to the second blocking insulating layer 121 or the interlayer insulatinglayer 101, an oxidizing thickness of the second portion P2A illustratedin 4E may be controlled in the oxidizing process.

The isolation layer 135 may be an oxide of the second conductive pattern133. For example, when the second conductive pattern 133 includestungsten, the isolation layer 135 may include a tungsten oxide.

Referring to FIG. 4G, a slit insulating layer 141 filling the inside ofthe slit SI may be formed. The slit insulating layer 141 may contact theisolation layer 135.

FIGS. 5A and 5B are cross-sectional diagrams illustrating arepresentation of an example of a manufacturing method of asemiconductor device according to an embodiment of the presentdisclosure. A manufacturing method of the semiconductor deviceillustrated in FIGS. 5A and 5B may be used for forming the semiconductordevice illustrated in FIG. 1B. FIGS. 5A and 5B are cross-sectionaldiagrams of the semiconductor device cut along the second direction IIof the extension direction of the bit lint BL illustrated in FIGS. 3A to3C.

Referring to 5A, by performing the same process as described in FIGS. 4Ato 4E, the pillar structures PS arranged inside the holes H penetratinginterlayer insulating layers 201, the slit SI penetrating the interlayerinsulating layers 201, first conductive patterns 231P filling theinterlayer spaces S arranged between the interlayer insulating layers201, and second conductive patterns 233 contacting the first conductivepatterns 231P and protruding toward the slit SI from the inside of theinterlayer spaces S may be formed.

Each of the pillar structures PS may include a multilayer 211, a channellayer 213 and a core insulating layer 215.

A second blocking insulating layer 221 may be further formed prior toforming the first conductive patterns 231P as described in FIG. 4C.

Each of the first conductive patterns 231P may fill a portion of thesingle interlayer space S corresponding thereto, and the first portionP1 of each of the second conductive patterns 233 may fill the remainingportion of the single interlayer space S corresponding thereto. Thesecond portion P2A of each of the second conductive patterns 233 mayextend toward the slit SI from the first portion P1.

During the process of forming the first conductive patterns 231P and thesecond conductive patterns 233 as described above, a remainingconductive material R may remain on edges of the interlayer insulatinglayers 201 defined along the slit SI.

Referring to FIG. 5B, a portion of the second portion P2A of each of thesecond conductive patterns 233 illustrated in FIG. 5A may be oxidized ina predetermined thickness from the surface thereof. The remainingconductive material R illustrated in FIG. 5A and the second portion P2Aof each of the second conductive patterns 233 may be concurrentlyoxidized. Due to an oxidized area of the remaining conductive materialR, the oxidized areas of the second conductive patterns 233 may beconnected to one another. As a result, an isolation layer 235 may extendon the edges of the interlayer insulating layers 201 and on the surfaceof the non-oxidized second portion P2B.

A slit insulating layer 241 filling the inside of the slit SI may beformed. The slit insulating layer 241 may contact the isolation layer235.

In an embodiment, the resistance of the conductive pattern may bereduced by extending the conductive pattern between the interlayerinsulating layers to deviate from the interlayer space between theinterlayer insulating layers.

In an embodiment, by forming the isolation layer by oxidizing a portionof the conductive pattern deviating from the interlayer space, a bridgephenomenon where the conductive pattern and the lower conductive patternor the conductive pattern and the upper conductive pattern areelectrically connected may be prevented through the isolation layer. Aninsulating distance between the conductive pattern and the lowerconductive pattern and an insulating distance between the conductivepattern and the upper conductive pattern may be achieved by theisolation layer.

FIG. 6 is a block diagram illustrating a representation of an example ofa memory system according to an embodiment of the present disclosure.

Referring to FIG. 6, a memory system 1100 according to an embodiment mayinclude a memory device 1120 and a memory controller 1110.

The memory device 1120 may include at least one of the structures asdescribed in FIGS. 1A and 1B. The memory device 1120 may include atleast one of the memory strings as described in FIGS. 3A to 3C, and thememory strings may include at least one of the structures as describedin FIGS. 1A and 1B. The memory strings may be formed by using theprocesses as described in FIGS. 4A to 4G, or the processes as describedin FIGS. 5A and 5B.

The memory device 1120 may be a multi-chip package consisting of aplurality of flash memory chips. According to an embodiment, resistanceof the conductive patterns constituting the chip may be reduced withoutthe increase of the chip size, and the bridge error between thedifferent conductive patterns may be improved.

The memory controller 1110 may be configured to control the memorydevice 1120, and include a static random access memory (SRAM, 1111), aCPU 1112, host interface 1113, an error correction code (ECC, 1114), andmemory interface 1115. The SRAM 1111 may be used as an operation memoryof the CPU 1112, the CPU 1112 may perform a general control operationfor data exchanged of the memory controller 1110, and the host interface1113 may include a data exchange protocol contacting the memory system1100. In addition, the ECC 1114 may detect and correct the errorincluded in the data read from the memory device 1120, and the memoryinterface 1115 may perform interfacing with the memory device 1120.Further, the memory controller 1110 may further include a read onlymemory (ROM) that stores code data for interfacing with the host and thelike.

The memory system 1100 as described above may be a memory card in whichthe memory device 1120 is combined with the controller 1110 or a solidstate disk (SSD). For example, when the memory system 1100 is the SSD,the memory controller 1110 may communicated with an external source (forexample, a host) through one of the various interface protocols such asuniversal serial bus (USB), multimedia card (MMC), peripheral componentinterconnection-express (PCI-E), serial advanced technology attachment(SATA), parallel advanced technology attachment (PATA), small computersmall interface (SCSI), enhanced small disk interface (ESDI), andintegrated drive electronics (IDE).

FIG. 7 is a block diagram illustrating a representation of an example ofa computing system according to an embodiment of the present disclosure.

Referring to FIG. 7, the computing system 1200 according to anembodiment may include the CPU 1220 electrically connected to system bus1260, a random access memory (RAM, 1230), user interface 1240, modem1250, a memory system 1210. In addition, when the computing system 1120is a mobile device, a battery for supplying an operation voltage to thecomputing system 1200 may be further included, and an applicationchipset, a camera image processor (CIS), and a mobile dynamic randomaccess memory (DRAM) and the like may be further included.

The memory system 1210 may consist of the memory device 1212 and thememory controller 1211 as described in reference to FIG. 6.

Examples of embodiments have been disclosed herein, and althoughspecific terms are employed, they are used and are to be interpreted ina generic and descriptive sense only and not for purpose of limitation.Accordingly, it will be understood by those of skill in the art thatvarious changes may be made without departing from the spirit and scopeof the disclosure as set forth in the following claims.

What is claimed is:
 1. A semiconductor device, comprising: a channellayer; interlayer insulating layers surrounding the channel layer andstacked to be spaced apart from one another along an extension directionof the channel layer; conductive patterns filling interlayer spacesbetween the insulating layers adjacent to one another, and deviatingfrom the interlayer spaces; and first isolation layers covering aportion of the conductive patterns that deviate from the interlayerspaces, wherein the first isolation layers are formed of an oxide of theconductive patterns.
 2. The semiconductor device of claim 1, wherein theconductive patterns have a greater volume than the interlayer spaces. 3.The semiconductor device of claim 1, wherein each of the conductivepatterns comprises: a first conductive pattern filling a portion of eachof the interlayer spaces and surrounding the channel layer; and a secondconductive pattern including a first portion contacting the firstconductive pattern and filling a remaining portion of each of theinterlayer spaces and a second portion extending outwardly to an outsideof each of the interlayer spaces from the first portion.
 4. Thesemiconductor device of claim 3, wherein the first conductive patternand the second conductive pattern are formed of substantially a samemetal.
 5. The semiconductor device of claim 3, wherein a sidewall ofeach of the interlayer insulating layers further protrudes than asidewall of the first conductive pattern.
 6. The semiconductor device ofclaim 1, wherein each of the first isolation layers includes a tungstenoxide.
 7. The semiconductor device of claim 1, further comprising a slitdefining edges of the interlayer insulating layers.
 8. The semiconductordevice of claim 7, wherein the first isolation layers are connected bysecond isolation layers formed on the edges of the interlayer insulatinglayers.
 9. The semiconductor device of claim 7, wherein the conductivepatterns protrude further toward the slit than the edges of theinterlayer insulating layers.
 10. The semiconductor device of claim 1,wherein the interlayer spaces filled with the conductive patterns aresealed by the first isolation layers.
 11. The semiconductor device ofclaim 1, wherein the conductive patterns are electrically separated bythe first isolation layers.
 12. The semiconductor device of claim 1,wherein the first isolation layers are arranged to be spaced apart fromone another.